01/99
B-3
2N3821, 2N3822
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
50 V
Continuous Forward Gate Current
10 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2mW/C
TO72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25C free air temperature:
2N3821
2N3822
Process NJ32
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
50
50
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
0.1
0.1
nA
V
GS
= 30V, V
DS
= V
0.1
0.1
A
V
GS
= 30V, V
DS
= V
T
A
= 150C
0.5
2
V
V
DS
= 15V, I
D
= 50 A
Gate Source Voltage
V
GS
1
4
V
V
DS
= 15V, I
D
= 200 A
V
V
DS
= 15V, I
D
= 400 A
Gate Source Cutoff Voltage
V
GS(OFF)
4
6
V
V
DS
= 15V, I
D
= 0.5 nA
Drain Saturation Current (Pulsed)
I
DSS
0.5
2.5
2
10
mA
V
DS
= 15V, V
GS
= V
Drain Cutoff Current
I
D(OFF)
nA
V
DS
= 15V, V
GS
= 8V
A
V
DS
= 15V, V
GS
= 8V
T
A
= 150C
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
V
GS
= V, I
D
= V
f = 1 kHz
Common Source
g
fs
1500 4500 3000 6500
S
V
DS
= 15V, V
GS
= V
f = 1 kHz
Forward Transconductance
Common Source
| Y
fs
|
1500
3000
S
V
DS
= 15V, V
GS
= V
f = 100 MHz
Forward Transmittance
Common Source Output Conductance
g
os
10
20
S
V
DS
= 15V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
6
6
pF
V
DS
= 15V, V
GS
= V
f = 1 MHz
Common Source
C
rss
2
2
pF
V
DS
= 15V, V
GS
= V
f = 1 MHz
Reverse Transfer Capacitance
Equivalent Short Circuit
e
N
200
200 nV/
Hz
V
DS
= 15V, V
GS
= V
f = 10 Hz
Input Noise Voltage
Noise Figure
NF
5
5
dB
V
DS
= 15V, V
GS
= V
f = 10 Hz
R
G
= 1 M
VHF Amplifiers
Small Signal Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-3
PDF 
ZIP